2SA1972 datasheet(1/3 Pages) TOSHIBA TRANSISTOR (HIGH VOLTAGE


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N Epitaxial Silicon Transistor www.onsemi.com 3 Typical Performance Characteristics Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage Figure 3. Safe Operating Area Figure 4. Power Derating 1 10 100 1000 10000 1 10 100 1000 VCE = 4V h FE, DC CURRENT GAIN I C[mA], COLLECTOR CURRENT 1 10.


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To select a transistor for a particular application, the Transistor Datasheet provided by device manufacturers must be consulted. Most data sheets start off with the device type number at the top of the page, a descriptive title, and a list of major applications for the device.


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Size:37K st. TIP2955TIP3055COMPLEMENTARY SILICON POWERTRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP3055 is a silicon epitaxial-base planarNPN transistor mountend in TO-218 plasticpackage and intented for power switchingcircuits, series and shunt regulators, outputstages and hi-fi amplifiers.3The complementary PNP type is the.


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Hfe >. Caps = + similar ones. R1 = kOhm. R2 = kOhm. R1/R2 =. Empty or zero fields are ignored during the search! How to choose a replacement for a bipolar transistor 🔗. TOTAL: 142390 transistors.


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Description TRANSISTOR (POWER AMPLIFIER APPLICATIONS) 2SA1941 Datasheet (HTML) - Toshiba Semiconductor 2SA1941 Product details Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage. Similar Part No. - 2SA1941 More results


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The key feature is the Python interface, to use the transistor data in self-written optimization routines. Python interface Use the transistor data in you self-written optimization program, see figure: Automatic calculate your converter losses with many different transistors. Search the database for usable transistors for your application.


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DIP Type TransistorsTransistorsNPN Transistors2SC4793 FeaturesTO-220MF Units:mm High collector voltageVCEO=230V (min) Complementary to 2SA1837 High transition frequency :fT=100MHz (Typ.) RoHS product Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 230V Collector - Emitter Voltage VCEO 230 Emitt ..5.


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High Voltage Transistors NPN and PNP Features • Voltage and Current are Negative for PNP Transistors • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage 2N6515 2N6517, 2N6520 VCEO 250 350 Vdc Collector − Base Voltage 2N6515 2N6517, 2N6520 VCBO 250 350 Vdc Emitter − Base Voltage 2N6515.


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By Yayat Juliansyah Posted on October 22, 2022 Berikut ini adalah penjelasan tentang data set transistor final sanken yang biasa digunakan untuk rangkaian penguat audio ocl. Transistor sanken merupakan salah satu jenis transistor penguat akhir yang banyak digunakan pada berbagai rangkaian amplifier.


2SA1972 datasheet(1/3 Pages) TOSHIBA TRANSISTOR (HIGH VOLTAGE

Part #: 2SC2922. Download. File Size: 24Kbytes. Page: 1 Pages. Description: Silicon NPN Epitaxial Planar Transistor (Audio and General Purpose). Manufacturer: Sanken electric.


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Alternative Amplifier Transistors. KSA1220, 2N5551, S8550, BD136, TIP32C . Overview of D880 Transistor. The D880 Transistor is a Low Frequency Power Amplifier Transistor. The transistor is used in amplifier designs, most commonly in the class B amplifier circuits where a push pull configuration is involved. As we know a push pull circuit.


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PUBLICATION ORDERING INFORMATION. LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor. P.O. Box 5163, Denver, Colorado 80217 USA. Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada. Fax:


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Amplifier Transistors NPN Silicon Features These are Pb−Free Devices* • MAXIMUM RATINGS (TA = 25°C unless otherwise noted) THERMAL CHARACTERISTICS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.


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TRANSISTORS 15 AMP, 230 VOLT,150 WATT The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming TO−3PL in audio amplifier applications. They can also be used in other applications as transistor die protection devices. Features • Thermally Matched Bias Diode • Instant Thermal Bias Tracking


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the D998 is a silicon NPN darlington transistor, Uce = 60V, Ic = 1.5A, applications: power transistor


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TRANSISTOR Datasheet. Part #: TRANSIPILLARS. Datasheet: 270Kb/3P. Manufacturer: Schurter Inc.. Description: Transipillars, a rugged insulated mounting system. 1 Results.